ion beam sputtering

常见例句

WO_3 thin films prepared by Reactive Ion Beam Sputtering are amorphous at RT substrate temperature.
本文利用反應離子束濺射技術制備WO_3薄膜，在襯底溫度爲室溫時，濺射制備的薄膜經電子束（?）
Ion beam sputtering deposited Ni was used as etching mask. The measured etching rates increased with the increasing ICP dc bias.
採用離子束濺射生長的N i作爲刻蝕掩模，刻蝕速率隨ICP直流偏壓的增加而增加。
The results about the research on the characters of ion beam sputtering show that grid voltage and sputtering gas pressure have great influences on ion beam distribution and current.
濺射特性研究結果表明：屏極電壓和濺射氣壓對離子束均勻性和束流密度影響顯著；